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SUD50N06-09L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C unless noted)
2.5
100
V GS = 10 V
I D = 20 A
2.0
T J = 150 °C
1.5
T J = 25 °C
10
1.0
0.5
0.0
1
- 50
- 25
0
25
50
75
100
125
150
175
0
0.3
0.6
0.9
1.2
1.5
T J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
V SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 72004
S13-0298-Rev. F, 11-Feb-13
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
4
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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